Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen source

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 1.9K citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +15

An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

S. Strite, J. Ruan, Z. Li et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 328 citations

Wide-bandgap Semiconductor, Crystal Structure, Electrical Engineering +14

Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

Hiroshi Amano, Isamu Akasaki, Kazumasa Hiramatsu et al. · Thin Solid Films · 1988 · 268 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +9

Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine

M. Mizuta, Shinji Fujieda, Yoshishige Matsumoto et al. · Japanese Journal of Applied Physics · 1986 · 243 citations

Materials Science, Aln Film, Electrical Engineering +11

Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy

Hajime Okumura, S. Misawa, S. Yoshida · Applied Physics Letters · 1991 · 223 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +16