S. Strite

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

H. Morkoç̌, S. Strite, Guangjun Gao et al. · Journal of Applied Physics · 1994 · 2.7K citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Resonant cavity enhanced photonic devices

M. Selim Ünlü, S. Strite · Journal of Applied Physics · 1995 · 664 citations

Optical Materials, Engineering, Cavity Qed +17

An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

S. Strite, J. Ruan, Z. Li et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 328 citations

Wide-bandgap Semiconductor, Crystal Structure, Electrical Engineering +14

Progress and prospects for GaN and the III–V nitride semiconductors

S. Strite, Mao Lin, H. Morkoç̌ · Thin Solid Films · 1993 · 250 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +6

Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy

G. Martin, S. Strite, A. Botchkarev et al. · Applied Physics Letters · 1994 · 221 citations

Semiconductors, Aluminium Nitride, Gan Film Grown +12