S. Strite - Concepedia

Author

S. Strite

University of Illinois Urbana-Champaign

Also Known As

S Strite, S. Strite, S. Strite S. Strite, Samuel Strite

Publications

8.2K

Citations

H-Index

Concepts

All Affiliations

University of Illinois Urbana-Champaign IBM Research - Zurich Arizona State University Case Western Reserve University Boston University

About

S. Strite is an author at University of Illinois Urbana-Champaign specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	30	5.3K
2	Applied Physics	22	30	5.3K
3	Electrical Engineering	19	23	4.8K
4	Natural Sciences	1	1	105
5	Computer Engineering	1	1	11

S. Strite

Publications

5.4K

Citations

H-Index

Page 1

	Year	Citations
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies H. Morkoç̌, S. Strite, Guangjun Gao, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringSemiconductor DeviceSemiconductors	1994	2.7K
Resonant cavity enhanced photonic devices M. Selim Ünlü, S. Strite Journal of Applied Physics Optical MaterialsEngineeringCavity QedOptoelectronic DevicesWavelength Selectivity	1995	664
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy S. Strite, J. Ruan, Z. Li, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Wide-bandgap SemiconductorCrystal StructureElectrical EngineeringEngineeringPhysics	1991	328
Progress and prospects for GaN and the III–V nitride semiconductors S. Strite, Mao Lin, H. Morkoç̌ Thin Solid Films SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	1993	250
Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy G. Martin, S. Strite, A. Botchkarev, Applied Physics Letters SemiconductorsAluminium NitrideGan Film GrownWide-bandgap SemiconductorEngineering	1994	221
GaN grown on hydrogen plasma cleaned 6H-SiC substrates Mao Lin, S. Strite, Anchal Agarwal, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringWide-bandgap SemiconductorEngineering	1993	168
X-ray photoelectron spectroscopy and theory of the valence band and semicore Ga 3<i>d</i>states in GaN Walter R. L. Lambrecht, B. Segall, S. Strite, Physical review. B, Condensed matter Total EnergyWide-bandgap SemiconductorEngineeringNanoelectronicsQuantum Materials	1994	105
Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe S. Strite, D. Chandrasekhar, David J. Smith, Journal of Crystal Growth Materials ScienceIi-vi SemiconductorElectrical EngineeringEngineeringGaas Substrates	1993	105
Refractive indices of wurtzite and zincblende GaN Mao Lin, B. Sverdlov, S. Strite, Electronics Letters Materials ScienceWide-bandgap SemiconductorOptical MaterialsEngineeringZincblende Can Films	1993	83
Characterization of Group III-nitride semiconductors by high-resolution electron microscopy D. Chandrasekhar, David J. Smith, S. Strite, Journal of Crystal Growth SemiconductorsEngineeringApplied PhysicsGroup Iii-nitride SemiconductorsCategoryiii-v Semiconductor	1995	56

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