A. Botchkarev

Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy

G. Martin, A. Botchkarev, Angus Rockett et al. · Applied Physics Letters · 1996 · 682 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Very low resistance multilayer Ohmic contact to <i>n</i>-GaN

Zhifang Fan, S. Noor Mohammad, Wook Kim et al. · Applied Physics Letters · 1996 · 455 citations

Engineering, Materials Engineering, Materials Science +17

Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for <i>n</i>-GaN

S. Ruvimov, Z. Liliental-Weber, J. Washburn et al. · Applied Physics Letters · 1996 · 291 citations

Engineering, Materials Engineering, Materials Science +17

Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy

G. Martin, S. Strite, A. Botchkarev et al. · Applied Physics Letters · 1994 · 221 citations

Engineering, Materials Engineering, Materials Science +15

High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors

Özgür Aktaş, Z. Fan, S. Noor Mohammad et al. · Applied Physics Letters · 1996 · 219 citations

Engineering, Electrical Engineering, Materials Science +17