Z. Liliental-Weber

Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for <i>n</i>-GaN

S. Ruvimov, Z. Liliental-Weber, J. Washburn et al. · Applied Physics Letters · 1996 · 289 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Mechanism responsible for the semi-insulating properties of low-temperature-grown GaAs

X. Liu, A. Arun Prasad, Weimin Chen et al. · Applied Physics Letters · 1994 · 132 citations

Semiconductors, Ii-vi Semiconductor, Electrical Engineering +11

Synthesis of GaN by N ion implantation in GaAs (001)

Xi–Wei Lin, M. Behar, R.L. Maltez et al. · Applied Physics Letters · 1995 · 57 citations

Semiconductors, Materials Science, Electrical Engineering +11

‘‘Pinning’’ and Fermi level movement at GaAs surfaces and interfaces

W. E. Spicer, N. Newman, C. J. Spindt et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1990 · 50 citations

Semiconductors, Materials Science, Electrical Engineering +14

Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies

Z. Liliental-Weber, Mourad Benamara, J. Washburn et al. · Journal of Electronic Materials · 2001 · 37 citations

Materials Science, Material Analysis, X-ray Spectroscopy +7