J. Washburn - Concepedia

Author

J. Washburn

Also Known As

J Washburn, J. Tayloe Washburn, J. WASHBURN, J. Washburn, JACK WASHBURN, Jack Washburn, Jonathan Washburn, Joshua B Washburn, Washburn, J., Washburn, J. (Lawrence Berkeley Lab., CA (United States))

418

Publications

7.9K

Citations

H-Index

Concepts

All Affiliations

Lawrence Berkeley National Laboratory University of California, Berkeley Core Competence Polish Academy of Sciences

About

J. Washburn is an author at Lawrence Berkeley National Laboratory specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	46	146	7K
2	Applied Physics	45	137	6.7K
3	Natural Sciences	3	3	112
4	Biomedical Engineering	1	1	27
5	Chemical Engineering	1	1	52

J. Washburn

157

Publications

7.4K

Citations

H-Index

Page 1

	Year	Citations
Structural Transition in Large-Lattice-Mismatch Heteroepitaxy Yulin Chen, J. Washburn Physical Review Letters EngineeringSevere Plastic DeformationLarge-lattice-mismatch HeteroepitaxyElectronic StructureIsland Edge	1996	344
Formation Mechanism of Nanotubes in GaN Z. Liliental‐Weber, Y. Chen, S. Ruvimov, Physical Review Letters Materials ScienceWide-bandgap SemiconductorEngineeringCrystalline DefectsPhysics	1997	315
Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for <i>n</i>-GaN S. Ruvimov, Z. Liliental-Weber, J. Washburn, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringAluminium NitrideEngineering	1996	289
Some observations on the amorphous to crystalline transformation in silicon R. Drosd, J. Washburn Journal of Applied Physics Materials ScienceEngineeringAtomistic Recrystallization MechanismPhysicsCrystalline Defects	1982	246
Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy R. Fischer, W. T. Masselink, John F. Klem, Journal of Applied Physics EngineeringSemiconductor MaterialsOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	1985	194
Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire S. Ruvimov, Z. Liliental‐Weber, T. Suski, Applied Physics Letters Materials ScienceMaterials EngineeringWide-bandgap SemiconductorSemiconductor TechnologyEngineering	1996	165
Stress-induced movement of crystal boundaries Choh Hsien Li, Eugene H. Edwards, J. Washburn, Acta Metallurgica Crystal BoundariesEngineeringStrain LocalizationCrystal MaterialApplied Physics	1953	163
Electron microscope observations of deformed magnesium oxide J. Washburn, G. W. Groves, Anthony Kelly, Philosophical magazine Materials ScienceEngineeringSevere Plastic DeformationStrain LocalizationMicroscopy	1960	155
Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies T. Sands, V. G. Keramidas, A. J. Yu, Journal of materials research/Pratt's guide to venture capital sources Materials ScienceMaterials EngineeringIi-vi SemiconductorEngineeringSurface Science	1987	152
Diffusion-Induced Dislocations in Silicon J. Washburn, G. Thomas, H. J. Queisser Journal of Applied Physics Materials ScienceEdge DislocationsEngineeringPhysicsSevere Plastic Deformation	1964	132

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