Mao Lin

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

H. Morkoç̌, S. Strite, Guangjun Gao et al. · Journal of Applied Physics · 1994 · 2.7K citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Low resistance ohmic contacts on wide band-gap GaN

Mao Lin, Zhenqiang Ma, Fengyi Huang et al. · Applied Physics Letters · 1994 · 435 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +10

Progress and prospects for GaN and the III–V nitride semiconductors

S. Strite, Mao Lin, H. Morkoç̌ · Thin Solid Films · 1993 · 250 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +6

Reactive ion etching of GaN using BCl3

Mao Lin, Zhaoyan Fan, Zhongqi Ma et al. · Applied Physics Letters · 1994 · 212 citations

Materials Engineering, Electrical Engineering, Engineering +13

Weak-pairing higher order topological superconductors

Yuxuan Wang, Mao Lin, Taylor L. Hughes · Physical review. B./Physical review. B · 2018 · 209 citations · Full text

Superconducting Material, Engineering, Bismuth-based Superconductors +17