Applied Physics Letters · 1994 · 213 citations · 3 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSurface ScienceAuger Electron SpectroscopyEtching ProcessesIii-v SemiconductorsPlasma-surface InteractionsSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesEtch MechanismsEtch RateEtchingGallium Nitride (Gan) MaterialsMolecular Beam EpitaxyPlasma EtchingReactive Ion EtchingSurface Etching
Reactive ion etching with SiCl4 and BCl3 of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCl3 than with SiCl4 plasma. An etch rate of 8.5 Å/s was obtained with the BCl3 plasma for a plasma power of 200 W, pressure of 10 mTorr, and flow rate of 40 sccm. Auger electron spectroscopy (AES) was used to investigate the surface of GaN films after etching. Oxygen contamination has been detected from the AES profiles of etched GaN samples.
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GaN grown on hydrogen plasma cleaned 6H-SiC substrates
Mao Lin, S. Strite, Anchal Agarwal et al. · Applied Physics Letters · 1993 · 168 citations
J. I. Pánkové · Journal of The Electrochemical Society · 1972 · 60 citations