Japanese Journal of Applied Physics · 1986 · 243 citations · 7 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistrySemiconductor MaterialsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor SurfacesWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Crystal GrowthLattice MismatchLattice Mismatch EffectsLow-temperature GrowthLow-temperature MaterialsNitride Thin Films
The growth and characterization of AlN and GaN on GaAs are presented. Trimethylgallium (TMG) and trimethylaluminum (TMA) were used as group III sources and hydrazine as a nitrogen source. It was found for both nitrides that mass-transport-limited growth took place at high temperature, and that at low temperature the surface catalyzed decomposition of respective metalorganics manifested itself. Deposition of AlN film was observed at as low as 220°C and that of GaN at 450°C both on GaAs substrates. A distinct proof of cubic-form GaN grown on GaAs is obtained from results of the X-ray precession measurement. The <100> direction of GaN on (100) GaAs, however, is slightly tilted from that of the substrate. It is speculated that this tilt results from the very large lattice-mismatch existing between GaN and GaAs.
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