Gallium Nitride

Gallium Nitride is a wide-bandgap semiconductor material belonging to the III-V nitride family, distinguished by its hexagonal wurtzite crystal structure and a direct bandgap of approximately 3.4 eV, enabling high-performance optoelectronic and power electronic applications.

11.2K

Publications

544.4K

Citations

28.8K

Authors

3.1K

Institutions

Publications per year

2017–2026

2.5K

Authors

28.8K

  1. UK
    Umesh K. Mishra

    University of California, Santa Barbara, United States

    231 publications · 22.2K citations

    69

    h-index

  2. SP
    Steven P. DenBaars

    University of California, Santa Barbara, United States

    204 publications · 16.5K citations

    68

    h-index

  3. JS
    James S. Speck

    University of California, Santa Barbara, United States

    190 publications · 14.3K citations

    62

    h-index

  4. SK
    S. Keller

    University of California, Santa Barbara, United States

    165 publications · 11.3K citations

    55

    h-index

  5. SN
    Shuji Nakamura

    University of California, Santa Barbara, United States

    119 publications · 11.6K citations

    54

    h-index

1–5 of 28.8K

Venues

  1. Applied Physics Letters

    1.6K publications · 104.4K citations

    144

    h-index

  2. Journal of Applied Physics

    668 publications · 49.1K citations

    97

    h-index

  3. IEEE Electron Device Letters

    287 publications · 23.3K citations

    82

    h-index

  4. Journal of Crystal Growth

    995 publications · 35.7K citations

    80

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 421 publications · 25.6K citations

    72

    h-index

1–5