Gallium Nitride
Gallium Nitride is a wide-bandgap semiconductor material belonging to the III-V nitride family, distinguished by its hexagonal wurtzite crystal structure and a direct bandgap of approximately 3.4 eV, enabling high-performance optoelectronic and power electronic applications.
11.2K
Publications
544.4K
Citations
28.8K
Authors
3.1K
Institutions
Publications per year
2017–2026
2.5K
11.2K
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28.8K
University of California, Santa Barbara, United States
231 publications · 22.2K citations
69
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University of California, Santa Barbara, United States
204 publications · 16.5K citations
68
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University of California, Santa Barbara, United States
190 publications · 14.3K citations
62
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55
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University of California, Santa Barbara, United States
119 publications · 11.6K citations
54
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3.1K
University of California, Santa Barbara
Santa Barbara, United States
91 h-index
2.2K publications
173.9K citations

Centre National de la Recherche Scientifique
Paris, France
62 h-index
1.9K publications
72.7K citations
University of Illinois Urbana-Champaign
Urbana, United States
60 h-index
544 publications
68.2K citations
North Carolina State University
Raleigh, United States
58 h-index
867 publications
50.5K citations

Chinese Academy of Sciences
Beijing, China
54 h-index
2.3K publications
76.5K citations
Nagoya University
Nagoya, Japan
54 h-index
692 publications
55.9K citations

Lawrence Berkeley National Laboratory
Berkeley, United States
53 h-index
509 publications
43.4K citations

United States Naval Research Laboratory
Washington, United States
48 h-index
737 publications
37.1K citations
1–8 of 3.1K
1.6K publications · 104.4K citations
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668 publications · 49.1K citations
97
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287 publications · 23.3K citations
82
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995 publications · 35.7K citations
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JJAP · 421 publications · 25.6K citations
72
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