Proceedings of the IEEE · 2002 · 2.2K citations · 13 references
EngineeringElectrical EngineeringMaterials SciencePower ElectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesGallium Nitride Power ElectronicsHigh-electron-mobility TransistorsMicrowave DevicesPower ConditioningPower Electronics Devices
Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.
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GaN: Processing, defects, and devices
S. J. Pearton, J.C. Zolper, R. J. Shul et al. · Journal of Applied Physics · 1999 · 1.8K citations
Very-high power density AlGaN/GaN HEMTs
Yifeng Wu, D. Kapolnek, J. P. Ibbetson et al. · IEEE Transactions on Electron Devices · 2001 · 558 citations