S. Keller - Concepedia

Author

S. Keller

University of California, Santa Barbara ORCID

Also Known As

Jauniaux, Keller, S., Keller, Stacia, S Keller, S. KELLER, S. Keller, S. T. Keller, S.T. Keller, STACIA KELLER, Stacia Keller

703

Publications

32.3K

Citations

H-Index

133

Concepts

All Affiliations

University of California, Santa Barbara

About

S. Keller is an author at University of California, Santa Barbara specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	87	371	29.1K
2	Applied Physics	87	360	29K
3	Chemistry	15	15	1.1K
4	Natural Sciences	10	10	688
5	Chemical Engineering	8	8	503

S. Keller

411

Publications

31.2K

Citations

H-Index

Page 1

	Year	Citations
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs R. Vetury, N.Q. Zhang, S. Keller, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringPower ElectronicsSemiconductor DeviceVirtual Gate	2001	1.4K
Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films B. Heying, Xuemei Wu, S. Keller, Applied Physics Letters Materials ScienceDislocation DensitiesEpitaxial GrowthEngineeringDislocation Interaction	1996	825
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells Yong‐Hoon Cho, G. H. Gainer, A. J. Fischer, Applied Physics Letters Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesCarrier DynamicsTime-resolved Photoluminescence	1998	708
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, Nature Materials SemiconductorsMaterials ScienceAluminium NitrideEngineeringApplied Physics	2006	682
High-power AlGaN/GaN HEMTs for Ka-band applications Tomás Palacios, A. Chakraborty, Siddharth Rajan, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringHigh-frequency CharacterizationRf Semiconductor	2005	485
AlGaN/AlN/GaN high-power microwave HEMT L. Shen, S. Heikman, Brendan Moran, IEEE Electron Device Letters Wide-bandgap SemiconductorAlloy ScatteringElectrical EngineeringEngineeringNormal Hemts	2001	482
Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells Xuehua Wu, C. R. Elsass, A. Abare, Applied Physics Letters SemiconductorsQuantum ScienceStructural OriginIngan/gan Multiple QuantumMqw Stack	1998	456
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures Shigefusa F. Chichibu, A. Abare, M. S. Minsky, Applied Physics Letters Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringPiezoelectric FieldWell Thickness	1998	450
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays Steven P. DenBaars, Daniel Feezell, Katheryn Kelchner, Acta Materialia White OledPhotonicsElectrical EngineeringSolid-state LightingEngineering	2013	435
Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3 Xuehua Wu, L. M. Brown, D. Kapolnek, Journal of Applied Physics Materials ScienceMaterials EngineeringEngineeringPhysicsCrystalline Defects	1996	427

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