A. J. Fischer

“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

Yong‐Hoon Cho, G. H. Gainer, A. J. Fischer et al. · Applied Physics Letters · 1998 · 708 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +20

Light‐Extraction Enhancement of GaInN Light‐Emitting Diodes by Graded‐Refractive‐Index Indium Tin Oxide Anti‐Reflection Contact

J. K. Kim, Sameer Chhajed, M. F. Schubert et al. · Advanced Materials · 2008 · 295 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

Qi Dai, M. Schubert, M. H. Kim et al. · Applied Physics Letters · 2009 · 274 citations · Full text

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Room temperature continuous wave InGaAsN quantumwellvertical-cavity lasers emitting at 1.3 µm

K.D. Choquette, John F. Klem, A. J. Fischer et al. · Electronics Letters · 2000 · 251 citations · Full text

Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods

Y. Xi, Jingtian Xi, Th. Gessmann et al. · Applied Physics Letters · 2005 · 197 citations · Full text

Wide-bandgap Semiconductor, Engineering, Junction Temperature +17