Th. Gessmann - Concepedia

Author

Th. Gessmann

Rensselaer Polytechnic Institute

Also Known As

T. Gessmann, Th Gessmann, Th. Gessmann

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

Rensselaer Polytechnic Institute University of Stuttgart Boston University Max Planck Society National Central University

About

Th. Gessmann is an author at Rensselaer Polytechnic Institute specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	1.6K
2	Applied Physics	14	15	1.6K
3	Electrical Engineering	8	8	1.4K
4	Chemical Engineering	1	1	23
5	Chemistry	1	1	23

Th. Gessmann

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN <i>p-n</i> junction diodes Jay Shah, Y.-L. Li, Th. Gessmann, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringTheoretical ModelHigh Ideality FactorsSemiconductors	2003	461
Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes Sameer Chhajed, Y. Xi, Y.-L. Li, Journal of Applied Physics Luminous EfficacyPhotonicsElectrical EngineeringSolid-state LightingEngineering	2005	301
Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods Y. Xi, Jingtian Xi, Th. Gessmann, Applied Physics Letters Wide-bandgap SemiconductorEngineeringJunction TemperatureDifferent MethodsElectronic Devices	2005	197
High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications Th. Gessmann, E. Fred Schubert Journal of Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesSubstrate LedsPhotodetectors	2004	182
Omnidirectional reflector using nanoporous SiO_2 as a low-refractive-index material Jingtian Xi, Manas Ojha, Woojin Cho, Optics Letters Materials ScienceElectromagnetic MetamaterialsInternal OdrsEngineeringNanoporous Material	2005	68
Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths Y.-L. Li, Th. Gessmann, E. Fred Schubert, Journal of Applied Physics EngineeringCarrier DynamicsRoom-temperature Electroluminescence MeasurementsDifferent WavelengthsLight-emitting Diodes	2003	61
Omnidirectional reflective contacts for light-emitting diodes Th. Gessmann, E. Fred Schubert, J.W. Graff, IEEE Electron Device Letters White OledPhotonicsElectrical EngineeringOmnidirectional Reflective ContactsAlgainp Led	2003	59
Ohmic contacts to <i>p</i>-type GaN mediated by polarization fields in thin InxGa1−xN capping layers Th. Gessmann, Y.-L. Li, E. L. Waldron, Applied Physics Letters Materials SciencePolarization FieldsElectrical EngineeringWide-bandgap SemiconductorStrained Ingan	2002	58
Magnetic properties of high purity nanocrystalline nickel H. Kisker, Th. Gessmann, Roland Würschum, Nanostructured Materials Materials ScienceMagnetismFerromagnetismMagnetic PropertiesEngineering	1995	56
P-type conductivity in bulk AlxGa1−xN and AlxGa1−xN/AlyGa1−yN superlattices with average Al mole fraction &gt;20% J. K. Kim, E. L. Waldron, Y.-L. Li, Applied Physics Letters Materials EngineeringMaterials ScienceSuperconducting MaterialAluminium NitrideEngineering	2004	40

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