Jay Shah

Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN <i>p-n</i> junction diodes

Jay Shah, Y.-L. Li, Th. Gessmann et al. · Journal of Applied Physics · 2003 · 461 citations

Wide-bandgap Semiconductor, Engineering, Theoretical Model +16

Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods

Y. Xi, Jingtian Xi, Th. Gessmann et al. · Applied Physics Letters · 2005 · 197 citations · Full text

Wide-bandgap Semiconductor, Engineering, Junction Temperature +17

Junction temperature in light-emitting diodes assessed by different methods

Sameer Chhajed, Y. Xi, Thomas Gessmann et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2005 · 98 citations

Junction Temperature in Ultraviolet Light-Emitting Diodes

Y. Xi, Thomas Gessmann, Jingqun Xi et al. · Japanese Journal of Applied Physics · 2005 · 88 citations

Semiconductors, Electrical Engineering, Electronic Devices +13

Molecular beam epitaxy of GaSb0.5As0.5 and Al<i>x</i>Ga1−<i>x</i>Sb<i>y</i>As1−<i>y</i> lattice matched to InP

T. H. Chiu, W. T. Tsang, S. N. G. Chu et al. · Applied Physics Letters · 1985 · 47 citations

Optical Materials, Engineering, Crystal Growth Technology +17