S. N. G. Chu

Impression creep; a new creep test

S. N. G. Chu, J. C. M. Li · Journal of Materials Science · 1977 · 331 citations

Behavioral Sciences, Affective Computing, Paraphilia +2

Low-temperature photoluminescence from InGaAs/InP quantum wires and boxes

H. Temkin, G. J. Dolan, M. B. Panish et al. · Applied Physics Letters · 1987 · 326 citations

Optical Materials, Engineering, Optoelectronic Devices +20

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

S. A. Nikishin, N. N. Faleev, Vladimir G. Antipov et al. · Applied Physics Letters · 1999 · 200 citations

Materials Engineering, Semiconductors, Electrical Engineering +13

Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy

S. N. G. Chu, Albert T. Macrander, K. E. Strege et al. · Journal of Applied Physics · 1985 · 175 citations

Materials Science, Wafer Curvature, Engineering +15

High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy

H. M. Ng, T. D. Moustakas, S. N. G. Chu · Applied Physics Letters · 2000 · 166 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +17