N. N. Faleev

Vibrational properties of AlN grown on (111)-oriented silicon

T. Prokofyeva, M. Seon, J. Vanbuskirk et al. · Physical review. B, Condensed matter · 2001 · 260 citations

Natural Sciences, Materials Science, Physics +14

Radiative states in type-II GaSb/GaAs quantum wells

N. N. Ledentsov, J. Böhrer, Max Beer et al. · Physical review. B, Condensed matter · 1995 · 218 citations

Engineering, Materials Science, Physics +17

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

S. A. Nikishin, N. N. Faleev, Vladimir G. Antipov et al. · Applied Physics Letters · 1999 · 201 citations

Engineering, Materials Engineering, Materials Science +14

Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H–SiC substrates

Iftikhar Ahmad, M. Holtz, N. N. Faleev et al. · Journal of Applied Physics · 2004 · 101 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Experimental and theoretical study of acceptor activation and transport properties in <i>p</i>-type AlxGa1−xN/GaN superlattices

I. D. Goepfert, E. Fred Schubert, A. Osinsky et al. · Journal of Applied Physics · 2000 · 83 citations

Engineering, Materials Science, Physics +17