I. D. Goepfert

Optical properties of Si-doped GaN

E. Fred Schubert, I. D. Goepfert, W. Grieshaber et al. · Applied Physics Letters · 1997 · 213 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Enhancement of deep acceptor activation in semiconductors by superlattice doping

E. Fred Schubert, W. Grieshaber, I. D. Goepfert · Applied Physics Letters · 1996 · 137 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices

W. Grieshaber, E. Fred Schubert, I. D. Goepfert et al. · Journal of Applied Physics · 1996 · 129 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Evidence of compensating centers as origin of yellow luminescence in GaN

E. F. Schubert, I. D. Goepfert, Joan M. Redwing · Applied Physics Letters · 1997 · 84 citations

Materials Science, Rate Equations, Wide-bandgap Semiconductor +12

Experimental and theoretical study of acceptor activation and transport properties in <i>p</i>-type AlxGa1−xN/GaN superlattices

I. D. Goepfert, E. Fred Schubert, A. Osinsky et al. · Journal of Applied Physics · 2000 · 83 citations

Materials Science, Wide-bandgap Semiconductor, Aluminium Nitride +15