K. E. Strege

Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy

S. N. G. Chu, Albert T. Macrander, K. E. Strege et al. · Journal of Applied Physics · 1985 · 175 citations

Natural Sciences, Materials Engineering, Materials Science +17

Surface layer spinodal decomposition in In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i> and In1−<i>x</i>Ga<i>x</i>As grown by hydride transport vapor-phase epitaxy

S. N. G. Chu, S. Nakahara, K. E. Strege et al. · Journal of Applied Physics · 1985 · 98 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

Refractive index data from Ga _<i>x</i> In _{1− <i>x</i>} As _<i>y</i> P _{1− <i>y</i>} films

P. Chandra, L.A. Coldren, K. E. Strege · Electronics Letters · 1981 · 81 citations

Natural Sciences, Materials Science, Physics +17

Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) lasers

J. L. Zilko, L.J.P. Ketelsen, Y. Twu et al. · IEEE Journal of Quantum Electronics · 1989 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

X-ray double-crystal characterization of highly perfect InGaAs/InP grown by vapor-phase epitaxy

A. T. Macrander, K. E. Strege · Journal of Applied Physics · 1986 · 50 citations

Natural Sciences, Materials Science, Physics +16