The role of dislocation scattering in <i>n</i>-type GaN films

H. M. Ng, D. Doppalapudi, T. D. Moustakas, +2

Applied Physics Letters

SemiconductorsSemiconductor TechnologyWide-bandgap SemiconductorEngineeringCrystalline Defects +7

Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on <i>R</i>-plane (1012) sapphire substrates

H. M. Ng

Applied Physics Letters

High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy

H. M. Ng, T. D. Moustakas, S. N. G. Chu

Applied Physics Letters

Wide-bandgap SemiconductorAluminium NitrideEngineeringOptical TestingOptical Properties +15

Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition

Jian Zhong, Sriram Muthukumar, Y. Chen, +4

Applied Physics Letters

EngineeringOptoelectronic DevicesMetallic NanomaterialsSemiconductor NanostructuresChemical Engineering +15

Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μm wavelength in GaN/AlGaN heterostructures

Joerg Heber, Claire Gmachl, H. M. Ng, +1

Applied Physics Letters

Gan/algan HeterostructuresQuantum ScienceWide-bandgap SemiconductorEngineeringPhysics +12

Broadening of near-band-gap photoluminescence in n-GaN films

E. Iliopoulos, D. Doppalapudi, H. M. Ng, +1

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering +12

Distributed Bragg reflectors based on AlN/GaN multilayers

H. M. Ng, D. Doppalapudi, E. Iliopoulos, +1

Applied Physics Letters

Wide-bandgap SemiconductorAluminium NitrideOptical MaterialsEngineeringOptical Properties +14

Sub-picosecond electron scattering time for λ≃ 1.55µm intersubband transitions in GaN/AlGaN multiple quantum wells

Claire Gmachl, S.V. Frolov, H. M. Ng, +2

Electronics Letters

Properties of Ga2O3(Gd2O3)/GaN metal–insulator–semiconductor diodes

M. Hong, K.A. Anselm, J. Kwo, +8

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

SemiconductorsMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering +9

Growth and device applications of III-nitrides by MBE

T. D. Moustakas, E. Iliopoulos, Anand V. Sampath, +5

Journal of Crystal Growth

Materials ScienceEngineeringDevice ApplicationsApplied PhysicsCategoryiii-v Semiconductor