H. M. Ng

The role of dislocation scattering in <i>n</i>-type GaN films

H. M. Ng, D. Doppalapudi, T. D. Moustakas et al. · Applied Physics Letters · 1998 · 432 citations

Semiconductors, Semiconductor Technology, Wide-bandgap Semiconductor +9

Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on <i>R</i>-plane (1012) sapphire substrates

H. M. Ng · Applied Physics Letters · 2002 · 252 citations

High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy

H. M. Ng, T. D. Moustakas, S. N. G. Chu · Applied Physics Letters · 2000 · 166 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +17

Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition

Jian Zhong, Sriram Muthukumar, Y. Chen et al. · Applied Physics Letters · 2003 · 161 citations

Engineering, Optoelectronic Devices, Metallic Nanomaterials +17

Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μm wavelength in GaN/AlGaN heterostructures

Joerg Heber, Claire Gmachl, H. M. Ng et al. · Applied Physics Letters · 2002 · 125 citations

Gan/algan Heterostructures, Quantum Science, Wide-bandgap Semiconductor +14