Qi Dai

Origin of efficiency droop in GaN-based light-emitting diodes

Minho Kim, M. Schubert, Qi Dai et al. · Applied Physics Letters · 2007 · 1.3K citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

Qi Dai, M. Schubert, M. H. Kim et al. · Applied Physics Letters · 2009 · 277 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

Qi Dai, Qifeng Shan, Jing Wang et al. · Applied Physics Letters · 2010 · 223 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes

Qifeng Shan, David S. Meyaard, Qi Dai et al. · Applied Physics Letters · 2011 · 144 citations

Engineering, Electrical Engineering, Materials Science +17

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Qi Dai, Qifeng Shan, Jaehee Cho et al. · Applied Physics Letters · 2011 · 116 citations

Engineering, Electrical Engineering, Materials Science +17