Electronics Letters · 2000 · 252 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser PhysicsOptical SourcesQuantum OptoelectronicsQuantum Well DevicesQuantum WellsSemiconductor LasersContinuous Mode OperationContinuous OperationHeterostructure LasersQuantum Well LasersTunnel Junction GeometryTunnel Junction LasersVertical-cavity Surface-emitting Lasers
Selectively oxidised vertical-cavity lasers emitting at 1294 nm using InGaAsN/GaAs quantum wells which exhibit continuous wave operation at and above room temperature are reported for the first time. The lasers employ two n-type Al0.94Ga0.06As/GaAs distributed Bragg reflectors each with a selectively oxidised current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave singlemode lasing is observed up to 55°C. These lasers exhibit the longest wavelength reported to date for vertical-cavity surface lasers grown on GaAs substrates.
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1.3 μm room-temperature GaAs-based quantum-dot laser
Diana L. Huffaker, G. Park, Zhihui Zou et al. · Applied Physics Letters · 1998 · 761 citations
1-mW CW-RT monolithic VCSEL at 1.55 μm
J. Boucart, C. Starck, F. Gaborit et al. · IEEE Photonics Technology Letters · 1999 · 74 citations