Room temperature continuous wave InGaAsN quantumwellvertical-cavity lasers emitting at 1.3 µm

K.D. Choquette, John F. Klem, A. J. Fischer, O. Blum, A.A. Allerman, I. J. Fritz, S. R. Kurtz, W.G. Breiland, R. M. Sieg, K.M. Geib,

Electronics Letters · 2000 · 252 citations · 7 references

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Abstract

Selectively oxidised vertical-cavity lasers emitting at 1294 nm using InGaAsN/GaAs quantum wells which exhibit continuous wave operation at and above room temperature are reported for the first time. The lasers employ two n-type Al0.94Ga0.06As/GaAs distributed Bragg reflectors each with a selectively oxidised current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave singlemode lasing is observed up to 55°C. These lasers exhibit the longest wavelength reported to date for vertical-cavity surface lasers grown on GaAs substrates.

References

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