IEEE Photonics Technology Letters · 1998 · 169 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser PhysicsOptical SourcesQuantum Well DevicesQuantum WellsSemiconductor LasersCurrent DensityDiode Laser Threshold CurrentLaser OscillationPower OutputQuantum Well Laser DiodesQuantum Well LasersSemiconductor Laser DiodesVertical-cavity Surface-emitting Lasers
Vertical-cavity surface-emitting laser diodes with GaInNAs-GaAs quantum-well (QW) active layers are demonstrated for the first time. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. Room-temperature (RT) pulsed operation is achieved, with an active wavelength near 1.18 μm, threshold current density of 3.1 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , slope efficiency of /spl sim/0.04 W/A, and output power above 5 mW for 45-μm-diameter devices. Laser oscillation is observed for temperatures at high as 95/spl deg/C.
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Low threshold, wafer fused long wavelength vertical cavity lasers
J.J. Dudley, D.I. Babic, Richard P. Mirin et al. · Applied Physics Letters · 1994 · 118 citations
Room-temperature pulsed operationof 1.3 µm GaInNAs/GaAs laser diode
Shunichi Sato, Y. Osawa, T. Saitoh et al. · Electronics Letters · 1997 · 110 citations