GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes

Abstract

Vertical-cavity surface-emitting laser diodes with GaInNAs-GaAs quantum-well (QW) active layers are demonstrated for the first time. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. Room-temperature (RT) pulsed operation is achieved, with an active wavelength near 1.18 μm, threshold current density of 3.1 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , slope efficiency of /spl sim/0.04 W/A, and output power above 5 mW for 45-μm-diameter devices. Laser oscillation is observed for temperatures at high as 95/spl deg/C.