GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

Masahiko Kondow, K. Uomi, Atsuko Niwa, +3

Japanese Journal of Applied Physics

Materials SciencePhotonicsElectrical EngineeringLong-wavelength-range Laser DiodesExcellent High-temperature Performance +11

GaInNAs: a novel material for long-wavelength semiconductor lasers

Masahiko Kondow, T. Kitatani, Shin‐ichi Nakatsuka, +5

IEEE Journal of Selected Topics in Quantum Electronics

Wide-bandgap SemiconductorPhotonicsElectrical EngineeringOptical MaterialsEngineering +11

Gas-Source Molecular Beam Epitaxy of GaN_xAs_1-x Using a N Radical as the N Source

Masahiko Kondow, K. Uomi, Kazuhiko Hosomi, +1

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorElectrical EngineeringEngineeringN SourcePhysics +9

1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers

K. Nakahara, Masahiko Kondow, T. Kitatani, +2

IEEE Photonics Technology Letters

Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Physics +17

InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD

Masahiro Aoki, Makoto Suzuki, H. Sano, +5

IEEE Journal of Quantum Electronics

Mqw Dfb LaserOptical MaterialsEngineeringIngaas/ingaasp Mqw StructureOptoelectronic Devices +15

GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes

M.C. Larson, Masahiko Kondow, T. Kitatani, +4

IEEE Photonics Technology Letters

EngineeringLaser ScienceLaser ApplicationsLaser PhysicsLaser Material +15

Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth

Masahiro Aoki, H. Sano, M. Suzuki, +3

Electronics Letters

PhotonicsElectrical EngineeringEngineeringFundamental ModulationNovel Structure Electroabsorption +7

Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. I. Theory

K. Uomi

Japanese Journal of Applied Physics

PhotonicsQuantum ScienceEngineeringLaser SciencePhysics +9

Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy

Masahiko Kondow, K. Uomi, T. Kitatani, +2

Journal of Crystal Growth

Wide-bandgap SemiconductorPhysicsApplied PhysicsGan Power DeviceLarge N Content +1

Mechanism analysis of improved GaInNAs optical properties through thermal annealing

T. Kitatani, K. Nakahara, Masahiko Kondow, +2

Journal of Crystal Growth

Materials SciencePhotonicsEngineeringPhysicsOptical Transmission System +8