Japanese Journal of Applied Physics · 1996 · 1.4K citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsSemiconductor MaterialsHigh-temperature MaterialsLaser DiodesOptical Properties Of SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor LasersHigh-temperature Device OperationLaser Gain MaterialsOptical Gain MaterialsSemiconductor Laser DiodesTemperature Dependence Of Laser Performance
We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics ( T 0 ) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.