Atsuko Niwa - Concepedia

Concepedia

Author

Atsuko Niwa

Hitachi (Japan)

Also Known As

Atsuko Niwa, Atsuko Niwa Atsuko Niwa

11

Publications

1.6K

Citations

8

H-Index

18

Concepts

All Affiliations

Hitachi (Japan)

AN

About

Atsuko Niwa is an author at Hitachi (Japan) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	1.5K
2	Applied Physics	7	7	1.5K
3	Materials Science	6	6	1.5K
4	Physics	6	6	1.5K
5	Electrical Engineering	5	5	1.5K

Atsuko Niwa

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8

Publications

1.6K

Citations

8

H-Index

	Year	Citations
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance Masahiko Kondow, K. Uomi, Atsuko Niwa, Japanese Journal of Applied Physics Materials SciencePhotonicsElectrical EngineeringLong-wavelength-range Laser DiodesExcellent High-temperature Performance	1996	1.4K
Valence subband structures of (1010)-GaN/AlGaN strained quantum wells calculated by the tight-binding method Atsuko Niwa, T. Ohtoshi, T. Kuroda Applied Physics Letters	1997	58
Optical Properties of GaN Thin Films on Sapphire Substrates Characterized by Variable-Angle Spectroscopic Ellipsometry Tao Yang, Shigeo Goto, Masahiko Kawata, Japanese Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEllipsometric MeasurementEngineeringFundamental Bandgap Energy	1998	41
Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrier layers Kenji Uchida, Tao Tang, Shigeo Goto, Applied Physics Letters Materials ScienceElectrical EngineeringBarrier LayersEngineeringPhotoluminescence	1999	35
Crystal Orientation Effect on Valence-Subband Structures in Wurtzite-GaN Strained Quantum Wells T. Ohtoshi, Atsuko Niwa, T. Kuroda Japanese Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorEngineeringPhysicsApplied Physics	1996	28
Tight-Binding Analysis of the Optical Matrix Element in Wurtzite- and Zincblende-GaN Quantum Wells Atsuko Niwa, T. Ohtoshi, T. Kuroda Japanese Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	1996	25
Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy Kenji Uchida, Masahiko Kawata, Tao Yang, Journal of Electronic Materials PhotonicsElectrical EngineeringPhotoluminescenceEngineeringApplied Physics	1999	10
Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure Kenji Uchida, Jun Gotoh, Shigeo Goto, Japanese Journal of Applied Physics Wide-bandgap SemiconductorEngineeringHigher Growth PressureNanoelectronicsQuantum Materials	2000	10

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