Tunnel Junction Lasers
Tunnel Junction Lasers is a semiconductor laser device that employs a tunnel junction—a heavily doped p-n junction operating under band-to-band tunneling—as a key structural component to enable efficient carrier injection and facilitate cascaded active regions in multi-section or quantum cascade laser architectures.
94
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4.2K
Citations
380
Authors
103
Institutions
Publications per year
2017–2026
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International Institute for Applied Systems Analysis, Austria
12 publications · 413 citations
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Schott (Germany)
Mainz, Germany
20 h-index
80 publications
3.4K citations
Technical University of Munich
Munich, Germany
17 h-index
69 publications
2.8K citations
Vertilas (Germany)
Garching bei München, Germany
10 h-index
20 publications
580 citations
University of California, Santa Barbara
Santa Barbara, United States
9 h-index
52 publications
2.7K citations
University of Michigan
Ann Arbor, United States
6 h-index
19 publications
1.3K citations

Technische Universität Darmstadt
Darmstadt, Germany
5 h-index
9 publications
238 citations

Ioffe Institute
St Petersburg, Russia
4 h-index
13 publications
256 citations

Centre National de la Recherche Scientifique
Paris, France
3 h-index
11 publications
288 citations
1–8 of 103
16 publications · 774 citations
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15 publications · 1K citations
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IPTEL · 15 publications · 411 citations
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6 publications · 383 citations
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5 publications · 598 citations
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