Benjamin P. Yonkee - Concepedia

Author

Benjamin P. Yonkee

University of California, Santa Barbara

Also Known As

B. P. Yonkee, B. Yonkee, Benjamin P Yonkee, Benjamin P. Yonkee, Benjamin Yonkee

Publications

849

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara

About

Benjamin P. Yonkee is an author at University of California, Santa Barbara specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	12	691
2	Applied Physics	12	12	691
3	Electrical Engineering	10	10	609
4	Materials Science	6	6	363
5	Physics	4	4	199

Benjamin P. Yonkee

Publications

806

Citations

H-Index

Page 1

	Year	Citations
Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact John T. Leonard, Erin C. Young, Benjamin P. Yonkee, Applied Physics Letters EngineeringLaser ScienceLaser ApplicationsLaser MaterialOptoelectronic Devices	2015	139
Hybrid tunnel junction contacts to III–nitride light-emitting diodes Erin C. Young, Benjamin P. Yonkee, Feng Wu, Applied Physics Express SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesIii–nitride Light-emitting Diodes	2016	118
Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture John T. Leonard, Daniel A. Cohen, Benjamin P. Yonkee, Applied Physics Letters Semiconductor TechnologyPhotonicsElectrical EngineeringOptical MaterialsNm Nonpolar Vcsel	2015	99
Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction Benjamin P. Yonkee, Erin C. Young, Steven P. DenBaars, Applied Physics Letters Gan Tunnel JunctionEngineeringFlip ChipOptical PropertiesLight-emitting Diodes	2016	80
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching Casey Holder, John T. Leonard, Robert M. Farrell, Applied Physics Letters Materials SciencePhotonicsEngineeringApplied PhysicsPhotoelectrochemical Etching	2014	65
Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact Benjamin P. Yonkee, Erin C. Young, Changmin Lee, Optics Express	2016	59
Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture John T. Leonard, Benjamin P. Yonkee, Daniel A. Cohen, Applied Physics Letters Optical MaterialsEngineeringElectron-beam LithographyLaser ApplicationsOptoelectronic Devices	2016	47
High wall-plug efficiency blue III-nitride LEDs designed for low current density operation Leah Y. Kuritzky, Andrew Espenlaub, Benjamin P. Yonkee, Optics Express	2017	44
Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates David Hwang, Benjamin P. Yonkee, Burhan Saif Addin, Optics Express Materials ScienceThin-film Flip-chipElectrical EngineeringSolid-state LightingEngineering	2016	41
Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts John T. Leonard, Daniel A. Cohen, Benjamin P. Yonkee, Journal of Applied Physics PhotonicsElectrical EngineeringAdvanced Laser ProcessingEngineeringDifferential Efficiency	2015	30

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