Daniel A. Cohen

Indium tin oxide contacts to gallium nitride optoelectronic devices

Tal Margalith, O. Buchinsky, Daniel A. Cohen et al. · Applied Physics Letters · 1999 · 236 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

Mathew C. Schmidt, Kwang-Choong Kim, Robert M. Farrell et al. · Japanese Journal of Applied Physics · 2007 · 217 citations

Engineering, Electrical Engineering, Materials Science +17

Optical properties of InGaN quantum wells

Shigefusa F. Chichibu, A. Abare, M. Mack et al. · Materials Science and Engineering B · 1999 · 178 citations

Natural Sciences, Materials Science, Physics +14

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

John T. Leonard, Erin C. Young, Benjamin P. Yonkee et al. · Applied Physics Letters · 2015 · 141 citations

Engineering, Electrical Engineering, Materials Science +17

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

John T. Leonard, Daniel A. Cohen, Benjamin P. Yonkee et al. · Applied Physics Letters · 2015 · 102 citations · Full text

Engineering, Electrical Engineering, Materials Science +17