M. Mack

Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

X. H. Wu, C. R. Elsass, A. Abare et al. · Applied Physics Letters · 1998 · 458 citations

Engineering, Materials Engineering, Materials Science +17

Optical properties of InGaN quantum wells

Shigefusa F. Chichibu, A. Abare, M. Mack et al. · Materials Science and Engineering B · 1999 · 178 citations

Natural Sciences, Materials Science, Physics +14

A single-chip dual-band tri-mode CMOS transceiver for IEEE 802.11a/b/g wireless LAN

M. Zargari, Manolis Terrovitis, S.H. Jen et al. · IEEE Journal of Solid-State Circuits · 2004 · 131 citations

Engineering, Communication, Electrical Engineering +17

Electron-irradiation-induced deep level in n-type GaN

Z.-Q. Fang, J. W. Hemsky, D. C. Look et al. · Applied Physics Letters · 1998 · 119 citations

Engineering, Materials Engineering, Materials Science +16

Widely tunable electroabsorption-modulated sampled-grating DBR laser transmitter

Yuliya Akulova, G.A. Fish, Ping-Chiek Koh et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2002 · 116 citations

Engineering, Electrical Engineering, Microelectronics +16