Z.-Q. Fang

Electron-irradiation-induced deep level in n-type GaN

Z.-Q. Fang, J. W. Hemsky, D. C. Look et al. · Applied Physics Letters · 1998 · 119 citations

Engineering, Materials Engineering, Materials Science +16

Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers

Z.-Q. Fang, B. Claflin, D. C. Look et al. · Journal of Applied Physics · 2010 · 109 citations

Engineering, Electrical Engineering, Materials Science +17

Traps in AlGaN∕GaN∕SiC heterostructures studied by deep level transient spectroscopy

Z.-Q. Fang, D. C. Look, Dae‐Hyeong Kim et al. · Applied Physics Letters · 2005 · 107 citations

Engineering, Materials Engineering, Materials Science +17

Deep centers in a free-standing GaN layer

Z.-Q. Fang, D. C. Look, Paolo Visconti et al. · Applied Physics Letters · 2001 · 101 citations

Engineering, Electrical Engineering, Materials Science +17

Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

Z.-Q. Fang, D. C. Look, Jacek B. Jasiński et al. · Applied Physics Letters · 2001 · 101 citations · Full text

Engineering, Materials Engineering, Materials Science +17