C. R. Elsass

Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

Xuehua Wu, C. R. Elsass, A. Abare et al. · Applied Physics Letters · 1998 · 456 citations

Semiconductors, Quantum Science, Structural Origin +15

Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson et al. · Journal of Applied Physics · 1999 · 433 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Dislocation mediated surface morphology of GaN

B. Heying, E. J. Tarsa, C. R. Elsass et al. · Journal of Applied Physics · 1999 · 400 citations

Materials Engineering, Materials Science, Epitaxial Growth +13

Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

B. Heying, I. P. Smorchkova, C. Poblenz et al. · Applied Physics Letters · 2000 · 195 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +17

Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

I. P. Smorchkova, S. Keller, S. Heikman et al. · Applied Physics Letters · 2000 · 117 citations

Materials Science, Aln Barrier Width, Electrical Engineering +11