S. Heikman - Concepedia

Author

S. Heikman

Also Known As

Heikman, Sten; Jacob-Mitos, Matthew; Li, Ting; Ibbetson, James, S Heikman, S. Heikman, S.J. Heikman, STEN HEIKMAN, Sten Heikman, Sten J. Heikman

Publications

5.8K

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara University of Padua Northumbria University

About

S. Heikman is an author at University of California, Santa Barbara specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	34	51	5.3K
2	Applied Physics	31	42	4.8K
3	Electrical Engineering	30	44	4.3K
4	Chemical Engineering	2	2	80
5	Chemistry	1	1	174

S. Heikman

Publications

5.6K

Citations

H-Index

Page 1

	Year	Citations
AlGaN/AlN/GaN high-power microwave HEMT L. Shen, S. Heikman, Brendan Moran, IEEE Electron Device Letters Wide-bandgap SemiconductorAlloy ScatteringElectrical EngineeringEngineeringNormal Hemts	2001	482
AlGaN/GaN high electron mobility transistors with InGaN back-barriers Tomás Palacios, A. Chakraborty, S. Heikman, IEEE Electron Device Letters Electrical EngineeringEngineeringRf SemiconductorNanoelectronicsGan/ultrathin Ingan/gan Heterojunction	2005	371
Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition S. Heikman, S. Keller, Steven P. DenBaars, Applied Physics Letters Materials ScienceMaterials EngineeringWide-bandgap SemiconductorFe PrecursorEngineering	2002	353
High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates Huili Grace Xing, Y. Dora, Alessandro Chini, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringField PlatesHigh Voltage Engineering	2004	346
AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy I. P. Smorchkova, L. Chen, Thomas E. Mates, Journal of Applied Physics Materials ScienceSemiconductorsAluminium NitrideWide-bandgap SemiconductorEngineering	2001	323
High breakdown GaN HEMT with overlapping gate structure N.-Q. Zhang, S. Keller, Giacinta Parish, IEEE Electron Device Letters Wide-bandgap SemiconductorGate StructureElectrical EngineeringEngineeringApplied Physics	2000	307
A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz Yifeng Wu, Matt Jacob-Mitos, M. Moore, IEEE Electron Device Letters High Conversion EfficiencyElectrical EngineeringEngineeringPower DeviceElectronic Engineering	2008	254
Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures S. Heikman, S. Keller, Yuan Wu, Journal of Applied Physics Materials ScienceLayer ThicknessElectrical EngineeringAlgan Layer ThicknessSheet Carrier Density	2003	239
Influence of the Dynamic Access Resistance in the<tex>$g_m$</tex>and<tex>$f_T$</tex>Linearity of AlGaN/GaN HEMTs Tomás Palacios, Siddharth Rajan, A. Chakraborty, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringRf SemiconductorPhysicsNanoelectronics	2005	207
Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys Debdeep Jena, S. Heikman, Daniel Green, Applied Physics Letters Wide-bandgap SemiconductorEngineeringExperimental RealizationOptoelectronic DevicesSemiconductors	2002	190

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