S. Heikman

AlGaN/AlN/GaN high-power microwave HEMT

L. Shen, S. Heikman, Brendan Moran et al. · IEEE Electron Device Letters · 2001 · 482 citations

Wide-bandgap Semiconductor, Alloy Scattering, Electrical Engineering +12

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

Tomás Palacios, A. Chakraborty, S. Heikman et al. · IEEE Electron Device Letters · 2005 · 371 citations

Electrical Engineering, Engineering, Rf Semiconductor +11

Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

S. Heikman, S. Keller, Steven P. DenBaars et al. · Applied Physics Letters · 2002 · 353 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +11

High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

Huili Grace Xing, Y. Dora, Alessandro Chini et al. · IEEE Electron Device Letters · 2004 · 346 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

I. P. Smorchkova, L. Chen, Thomas E. Mates et al. · Journal of Applied Physics · 2001 · 323 citations

Materials Science, Semiconductors, Aluminium Nitride +12