Y. Dora

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

Y. Dora, A. Chakraborty, L. McCarthy et al. · IEEE Electron Device Letters · 2006 · 434 citations

Engineering, Electrical Engineering, Materials Science +17

High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

Huili Grace Xing, Y. Dora, Alessandro Chini et al. · IEEE Electron Device Letters · 2004 · 353 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Effect of ohmic contacts on buffer leakage of GaN transistors

Y. Dora, A. Chakraborty, S. Heikman et al. · IEEE Electron Device Letters · 2006 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

ZrO 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistors

Y. Dora, Sooyeon Han, Dmitri O. Klenov et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2006 · 46 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Optimization of AlGaN/GaN HEMTs for high frequency operation

Tomás Palacios, Y. Dora, A. Chakraborty et al. · physica status solidi (a) · 2006 · 44 citations · Full text

Engineering, Electrical Engineering, Materials Science +17