L. McCarthy

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

Y. Dora, A. Chakraborty, L. McCarthy et al. · IEEE Electron Device Letters · 2006 · 423 citations

Electrical Engineering, Engineering, High Voltage Engineering +12

AlGaN/GaN heterojunction bipolar transistor

L. McCarthy, P. Kozodoy, M.J.W. Rodwell et al. · IEEE Electron Device Letters · 1999 · 126 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

Gallium nitride based transistors

Huili Grace Xing, S. Keller, Y. F. Wu et al. · Journal of Physics Condensed Matter · 2001 · 108 citations

Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts

Haijiang Yu, L. McCarthy, Siddharth Rajan et al. · IEEE Electron Device Letters · 2005 · 102 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +14

Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures

D. Buttari, Alessandro Chini, Tomás Palacios et al. · Applied Physics Letters · 2003 · 87 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +14