Alessandro Chini

GaN-based power devices: Physics, reliability, and perspectives

Matteo Meneghini, Carlo De Santi, Idriss Abid et al. · Journal of Applied Physics · 2021 · 572 citations · Full text

Wide-bandgap Semiconductor, Engineering, Power Devices +18

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

Davide Bisi, Matteo Meneghini, Carlo De Santi et al. · IEEE Transactions on Electron Devices · 2013 · 434 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

Huili Grace Xing, Y. Dora, Alessandro Chini et al. · IEEE Electron Device Letters · 2004 · 346 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs

Gaudenzio Meneghesso, G. Verzellesi, R. Pierobon et al. · IEEE Transactions on Electron Devices · 2004 · 318 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

N-polar GaN∕AlGaN∕GaN high electron mobility transistors

Siddharth Rajan, Alessandro Chini, Man Hoi Wong et al. · Journal of Applied Physics · 2007 · 240 citations · Full text

Wide-bandgap Semiconductor, N-polar Gan-based Transistors, Electrical Engineering +12