High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

Abstract

A self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs. Devices were tested in Fluorinert to eliminate the breakdown of air, which was identified to limit the breakdown voltage in AlGaN/GaN HEMTs. A single integrated field plate, which is self-aligned with the gate, is shown to support more than a kilovolt breakdown voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">br</sub> up to 1900 V was measured with Fluorinert). Devices made with this technology show a good large signal-frequency behavior. Various issues regarding breakdown measurements and interpretation of measurement results are presented