Steven P. DenBaars - Concepedia

Author

Steven P. DenBaars

University of California, Santa Barbara ORCID

Also Known As

DenBaars, DenBaars, Steven, DenBaars, Steven P., DenBaars, Steven P. (author), Denbaars Steven P, Denbaars, S., JoachimPiprek DenBaars, L.A. Coldren, P Chen, S DENBAARS

1.5K

Publications

67.1K

Citations

126

H-Index

207

Concepts

All Affiliations

University of California, Santa Barbara Mitsubishi Chemical (Japan)

About

Steven P. DenBaars is an author at University of California, Santa Barbara specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	118	737	59.3K
2	Applied Physics	115	714	55.7K
3	Chemical Engineering	19	27	2K
4	Natural Sciences	17	20	1.6K
5	Biomedical Engineering	1	1	84

Steven P. DenBaars

831

Publications

64.8K

Citations

126

H-Index

Page 1

	Year	Citations
Prospects for LED lighting Siddha Pimputkar, James S. Speck, Steven P. DenBaars, Nature Photonics Light RegulationSolid-state LightingEngineeringLed LightingNew Lighting Technology	2009	2.1K
Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces D. Leonard, Mohan Krishnamurthy, C.M. Reaves, Applied Physics Letters Direct FormationEngineeringUniform Coherent IslandsAdatom Attachment ProbabilitiesOptoelectronic Devices	1993	1.7K
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening Tetsuo Fujii, Yan Gao, Rajat Sharma, Applied Physics Letters White OledElectrical EngineeringSurface RougheningEngineeringSolid-state Lighting	2004	1.3K
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors J. P. Ibbetson, P. Fini, K. D. Ness, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2000	1.1K
Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films B. Heying, Xuemei Wu, S. Keller, Applied Physics Letters Materials ScienceDislocation DensitiesEpitaxial GrowthEngineeringDislocation Interaction	1996	825
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements John F. Muth, J. H. Lee, I. K. Shmagin, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringAbsorption SpectroscopyOptical Properties	1997	746
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells Yong‐Hoon Cho, G. H. Gainer, A. J. Fischer, Applied Physics Letters Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesCarrier DynamicsTime-resolved Photoluminescence	1998	708
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, Nature Materials SemiconductorsMaterials ScienceAluminium NitrideEngineeringApplied Physics	2006	682
Structural characterization of nonpolar (1120) <i>a</i>-plane GaN thin films grown on (1102) <i>r</i>-plane sapphire Michael D. Craven, Sung‐Hwan Lim, Feng Wu, Applied Physics Letters	2002	486
High-power AlGaN/GaN HEMTs for Ka-band applications Tomás Palacios, A. Chakraborty, Siddharth Rajan, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringHigh-frequency CharacterizationRf Semiconductor	2005	485

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