A. Abare - Concepedia

Author

A. Abare

Also Known As

A Abare, A. ABARE, A. Abare, A. C. Abare, A.C Abare, A.C. Abare, Abare, A.C. [Florida Univ., Gainesville, FL (United States)]; Keane, C.J.; Crane, J.K.; DaSilva, L.B.; Lee, R.W.; Perry, M.D. [Lawrence Livermore National Lab., CA (United States)]; Falcone, R.W. [California Univ., Berkeley, CA (United States). Dept. of Physics], Amber Abare, Amber C. Abare

Publications

2.6K

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara National Taiwan University Hewlett-Packard (United States)North Carolina State University Waseda University

About

A. Abare is an author at University of California, Santa Barbara specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	24	2.3K
2	Applied Physics	19	24	2.3K
3	Physics	15	18	1.8K
4	Electrical Engineering	12	13	1.3K
5	Materials Science	2	2	172

A. Abare

Publications

2.4K

Citations

H-Index

Page 1

	Year	Citations
Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells Xuehua Wu, C. R. Elsass, A. Abare, Applied Physics Letters SemiconductorsQuantum ScienceStructural OriginIngan/gan Multiple QuantumMqw Stack	1998	456
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures Shigefusa F. Chichibu, A. Abare, M. S. Minsky, Applied Physics Letters Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringPiezoelectric FieldWell Thickness	1998	450
Indium tin oxide contacts to gallium nitride optoelectronic devices Tal Margalith, O. Buchinsky, Daniel A. Cohen, Applied Physics Letters Uniform LuminescenceSemiconductor TechnologyElectrical EngineeringElectronic DevicesOptical Materials	1999	234
Optical properties of InGaN quantum wells Shigefusa F. Chichibu, A. Abare, M. Mack, Materials Science and Engineering B PhotonicsQuantum ScienceEngineeringPhysicsApplied Physics	1999	176
Growth and characterization of bulk InGaN films and quantum wells S. Keller, B.P. Keller, D. Kapolnek, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesIngan Bulk LayersSemiconductor Nanostructures	1996	158
High efficiency GaN-based LEDs and lasers on SiC J. A. Edmond, A. Abare, Mike Bergman, Journal of Crystal Growth Electrical EngineeringSolid-state LightingEngineeringSemiconductor LasersApplied Physics	2004	139
Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD M. Mack, A. Abare, M. Aizcorbe, MRS Internet Journal of Nitride Semiconductor Research PhotonicsElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	1997	107
Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence M. S. Minsky, S. B. Fleischer, A. Abare, Applied Physics Letters PhotonicsElectrical EngineeringRapid LifetimeEngineeringPhotoluminescence	1998	84
Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes Shigefusa F. Chichibu, Dan Cohen, M. Mack, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringOptical MaterialsThreshold Power Density	1998	68
Gain spectroscopy on InGaN/GaN quantum well diodes M. Kuball, E.-S. Jeon, Y.-K. Song, Applied Physics Letters PhotonicsPhotoluminescenceEngineeringBlue Laser ActionPhysics	1997	62

Page 1