A. Abare

Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

X. H. Wu, C. R. Elsass, A. Abare et al. · Applied Physics Letters · 1998 · 458 citations

Engineering, Materials Engineering, Materials Science +17

Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

Shigefusa F. Chichibu, A. Abare, M. S. Minsky et al. · Applied Physics Letters · 1998 · 453 citations

Natural Sciences, Materials Science, Physics +17

Indium tin oxide contacts to gallium nitride optoelectronic devices

Tal Margalith, O. Buchinsky, Daniel A. Cohen et al. · Applied Physics Letters · 1999 · 236 citations

Engineering, Electrical Engineering, Materials Science +17

Optical properties of InGaN quantum wells

Shigefusa F. Chichibu, A. Abare, M. Mack et al. · Materials Science and Engineering B · 1999 · 178 citations

Natural Sciences, Materials Science, Physics +14

Growth and characterization of bulk InGaN films and quantum wells

S. Keller, B.P. Keller, D. Kapolnek et al. · Applied Physics Letters · 1996 · 160 citations

Engineering, Materials Engineering, Materials Science +17