B.P. Keller

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 825 citations

Materials Science, Dislocation Densities, Epitaxial Growth +12

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

John F. Muth, J. H. Lee, I. K. Shmagin et al. · Applied Physics Letters · 1997 · 746 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Very-high power density AlGaN/GaN HEMTs

Yifeng Wu, D. Kapolnek, J. P. Ibbetson et al. · IEEE Transactions on Electron Devices · 2001 · 549 citations

Electrical Engineering, Engineering, Rf Semiconductor +12

Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3

Xuehua Wu, L. M. Brown, D. Kapolnek et al. · Journal of Applied Physics · 1996 · 427 citations

Materials Science, Materials Engineering, Engineering +13

Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

Yuan Wu, B.P. Keller, S. Keller et al. · Applied Physics Letters · 1996 · 349 citations

Wide-bandgap Semiconductor, Electrical Engineering, Modfet Sample +14