D. Kapolnek

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 829 citations

Natural Sciences, Materials Engineering, Materials Science +17

Very-high power density AlGaN/GaN HEMTs

Yifeng Wu, D. Kapolnek, J. P. Ibbetson et al. · IEEE Transactions on Electron Devices · 2001 · 558 citations

Engineering, Electrical Engineering, Materials Science +17

Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3

X. H. Wu, L. M. Brown, D. Kapolnek et al. · Journal of Applied Physics · 1996 · 429 citations

Natural Sciences, Materials Engineering, Materials Science +17

Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

Yuan Wu, B.P. Keller, S. Keller et al. · Applied Physics Letters · 1996 · 350 citations

Engineering, Electrical Engineering, Materials Science +17

Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

D. Kapolnek, X. H. Wu, B. Heying et al. · Applied Physics Letters · 1995 · 319 citations

Natural Sciences, Materials Engineering, Materials Science +17