I. K. Shmagin

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

John F. Muth, J. H. Lee, I. K. Shmagin et al. · Applied Physics Letters · 1997 · 755 citations

Engineering, Materials Engineering, Materials Science +16

Visible-blind GaN Schottky barrier detectors grown on Si(111)

A. Osinsky, S. Gangopadhyay, Jinwei Yang et al. · Applied Physics Letters · 1998 · 127 citations

Engineering, Electrical Engineering, Materials Science +17

Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

S. Keller, B.P. Keller, D. Kapolnek et al. · Journal of Crystal Growth · 1997 · 68 citations

Natural Sciences, Materials Engineering, Materials Science +16

Investigation of <i>n</i>- and <i>p</i>-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor

Chris Yuan, T. Salagaj, A. Gurary et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 35 citations

Engineering, Materials Engineering, Materials Science +17

Growth and characterization of GaN single crystals

Cengiz M. Balkaş, Zlatko Sitar, Leah Bergman et al. · Journal of Crystal Growth · 2000 · 32 citations

Engineering, Materials Engineering, Materials Science +12