I. K. Shmagin

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

John F. Muth, J. H. Lee, I. K. Shmagin et al. · Applied Physics Letters · 1997 · 746 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Visible-blind GaN Schottky barrier detectors grown on Si(111)

A. Osinsky, S. Gangopadhyay, Jinwei Yang et al. · Applied Physics Letters · 1998 · 127 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +9

Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

S. Keller, B.P. Keller, D. Kapolnek et al. · Journal of Crystal Growth · 1997 · 67 citations

Materials Engineering, Materials Science, Epitaxial Growth +10

Investigation of <i>n</i>- and <i>p</i>-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor

Chris Yuan, T. Salagaj, A. Gurary et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 35 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Growth and characterization of GaN single crystals

Cengiz M. Balkaş, Zlatko Sitar, Leah Bergman et al. · Journal of Crystal Growth · 2000 · 31 citations

Materials Science, Engineering, Applied Physics +4