A. Gurary - Concepedia

Author

A. Gurary

Veeco (United States)

Also Known As

A. GURARY, A. Gurary, A. I. Gurary, A.I. Gurary, Alex Gurary, Gurary, A.

Publications

463

Citations

H-Index

Concepts

All Affiliations

Veeco (United States)Emcore (United States)Rutgers, The State University of New Jersey University of Florida Somerset Medical Center

About

A. Gurary is an author at Veeco (United States) specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	408
2	Applied Physics	4	4	173
3	Electrical Engineering	4	4	154
4	Chemical Engineering	1	1	16
5	Materials Engineering	1	1	35

A. Gurary

Publications

408

Citations

H-Index

Page 1

	Year	Citations
On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters Bojan Mitrovic, A. Gurary, L. Kadinski Journal of Crystal Growth EngineeringProcess ParametersFluid MechanicsFlow StabilityDisc Mocvd Reactors	2005	78
Process conditions optimization for the maximum deposition rate and uniformity in vertical rotating disc MOCVD reactors based on CFD modeling Bojan Mitrovic, A. Gurary, W. E. Quinn Journal of Crystal Growth Process Conditions OptimizationEngineeringDisc Mocvd ReactorsMaximum Deposition Rate	2007	75
Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors L. Kadinski, V. Merai, A. Parekh, Journal of Crystal Growth Electrical EngineeringGan/ingan DepositionEngineeringDisk ReactorsApplied Physics	2003	58
Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors Bojan Mitrovic, A. Parekh, J. Ramer, Journal of Crystal Growth EngineeringMechanical EngineeringReactor Design Optimization3D PrintingDisc Reactors	2006	50
High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor C. YUAN, T. Salagaj, A. Gurary, Journal of The Electrochemical Society Materials ScienceUndoped FilmsElectrical EngineeringWide-bandgap SemiconductorEngineering	1995	45
In situ metrology advances in MOCVD growth of GaN-based materials M. V. Belousov, B. Volf, J. Ramer, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorEngineeringApplied PhysicsAluminum Gallium Nitride	2004	35
Investigation of <i>n</i>- and <i>p</i>-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor Chris Yuan, T. Salagaj, A. Gurary, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials EngineeringMaterials ScienceElectrical EngineeringElectronic DevicesSemiconductors	1995	35
Thermal and flow issues in the design of metalorganic chemical vapor deposition reactors A. Gurary, Gary S. Tompa, Alan Thompson, Journal of Crystal Growth Materials ScienceChemical EngineeringFlow IssuesEngineeringLiquid Metal Cooling	1994	16
Design and operating characteristics of a metalorganic vapor phase epitaxy production scale, vertical, high speed, rotating disk reactor Gary S. Tompa, P. Zawadzki, K. Moy, Journal of Crystal Growth Electrical EngineeringEngineeringDisk ReactorHigh SpeedNuclear Reactors	1994	16

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