A. Parekh

Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

S. M. Ting, J. Ramer, D. I. Florescu et al. · Journal of Applied Physics · 2003 · 98 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +18

Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors

L. Kadinski, V. Merai, A. Parekh et al. · Journal of Crystal Growth · 2003 · 58 citations

Electrical Engineering, Gan/ingan Deposition, Engineering +6

Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors

Bojan Mitrovic, A. Parekh, J. Ramer et al. · Journal of Crystal Growth · 2006 · 50 citations

Engineering, Mechanical Engineering, Reactor Design Optimization +3

Sapphire substrate misorientation effects on GaN nucleation layer properties

Dongzhu Lu, D. I. Florescu, D.S. Lee et al. · Journal of Crystal Growth · 2004 · 32 citations

Categoryiii-v Semiconductor, Applied Physics, Physics +1

Advanced characterization studies of sapphire substrate misorientation effects on GaN-based LED device development

Dongzhu Lu, D. I. Florescu, D. S. Lee et al. · physica status solidi (a) · 2003 · 25 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17