J. Ramer

Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy

D. I. Florescu, V. M. Asnin, Fred H. Pollak et al. · Applied Physics Letters · 2000 · 119 citations

Semiconductors, Atomic Force Microscopy, Electrical Engineering +11

Nonalloyed Ti/Al Ohmic contacts to <i>n</i>-type GaN using high-temperature premetallization anneal

L. F. Lester, Judith M. Brown, J. Ramer et al. · Applied Physics Letters · 1996 · 107 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

S. M. Ting, J. Ramer, D. I. Florescu et al. · Journal of Applied Physics · 2003 · 98 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +18

Morphology and photoluminescence improvements from high-temperature rapid thermal annealing of GaN

J.C. Zolper, Mary H. Crawford, A. J. Howard et al. · Applied Physics Letters · 1996 · 93 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +16

Influence of oxygen on the activation of <i>p</i>-type GaN

B. A. Hull, Suzanne E. Mohney, Hari Venugopalan et al. · Applied Physics Letters · 2000 · 89 citations

Wide-bandgap Semiconductor, Electrical Engineering, Activation Process +11