Jinwei Yang

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

Max Shatalov, Wenhong Sun, A. V. Lunev et al. · Applied Physics Express · 2012 · 469 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to <b> <i>n</i> </b>-type GaN

B. P. Luther, Suzanne E. Mohney, Thomas N. Jackson et al. · Applied Physics Letters · 1997 · 260 citations

Engineering, Materials Engineering, Materials Science +17

Si 3 N 4 / AlGaN/GaN –metal–insulator–semiconductor heterostructure field–effect transistors

X. Hu, A. Koudymov, G. Simin et al. · Applied Physics Letters · 2001 · 252 citations

Engineering, Electrical Engineering, Materials Engineering +17

AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise

Wu Lu, Jinwei Yang, M.A. Khan et al. · IEEE Transactions on Electron Devices · 2001 · 239 citations

Engineering, Electrical Engineering, Materials Science +17

High-temperature performance of AlGaN/GaN HFETs on SiC substrates

R. Gaška, Q. Chen, Jinwei Yang et al. · IEEE Electron Device Letters · 1997 · 218 citations

Engineering, Electrical Engineering, Materials Science +17