Q. Chen

Schottky barrier detectors on GaN for visible–blind ultraviolet detection

Q. Chen, Jinhong Yang, A. Osinsky et al. · Applied Physics Letters · 1997 · 296 citations

Engineering, Materials Engineering, Materials Science +16

Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

M. Asif Khan, M. S. Shur, John N. Kuznia et al. · Applied Physics Letters · 1995 · 273 citations

Engineering, Electrical Engineering, Materials Science +17

High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

Lei Wang, M. I. Nathan, T-H. Lim et al. · Applied Physics Letters · 1996 · 258 citations

Engineering, Electrical Engineering, Materials Science +17

High-temperature performance of AlGaN/GaN HFETs on SiC substrates

R. Gaška, Q. Chen, Jinwei Yang et al. · IEEE Electron Device Letters · 1997 · 218 citations

Engineering, Electrical Engineering, Materials Science +17

Metal contacts to n-type GaN

A. C. Schmitz, A. T. Ping, M. Asif Khan et al. · Journal of Electronic Materials · 1998 · 189 citations

Engineering, Electrical Engineering, Materials Science +14