M. I. Nathan

Direct Observation of Ballistic Transport in GaAs

M. Heiblum, M. I. Nathan, D. Thomas et al. · Physical Review Letters · 1985 · 434 citations

Electrical Engineering, Engineering, Physics +12

Raman Spectra of Amorphous Si and Related Tetrahedrally Bonded Semiconductors

J.E. Smith, M. H. Brodsky, B. L. Crowder et al. · Physical Review Letters · 1971 · 377 citations

Materials Science, Semiconductors, Raman Spectra +12

High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

Lei Wang, M. I. Nathan, T-H. Lim et al. · Applied Physics Letters · 1996 · 257 citations

Materials Science, Pd/gan Diode, Electrical Engineering +11

Investigation of the<i>DX</i>center in heavily doped<i>n</i>-GaAs

D. K. Maude, J.C. Portal, L. Dmowski et al. · Physical Review Letters · 1987 · 148 citations

Semiconductors, Ii-vi Semiconductor, Electrical Engineering +12

Tunneling hot-electron transfer amplifier: A hot-electron GaAs device with current gain

M. Heiblum, D. Thomas, C. M. Knoedler et al. · Applied Physics Letters · 1985 · 139 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14