B. L. Crowder

A model for the formation of amorphous Si by ion bombardment

F. F. Morehead, B. L. Crowder · Radiation Effects · 1970 · 457 citations

Materials Science, Amorphous Si, Ion Implantation +14

Raman Spectra of Amorphous Si and Related Tetrahedrally Bonded Semiconductors

J.E. Smith, M. H. Brodsky, B. L. Crowder et al. · Physical Review Letters · 1971 · 377 citations

Materials Science, Semiconductors, Raman Spectra +12

ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON

B. L. Crowder, R. S. Title, M. H. Brodsky et al. · Applied Physics Letters · 1970 · 178 citations

Electrical Engineering, Optical Materials, Esr Signal +14

1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspective

B. L. Crowder, S. Zirinsky · IEEE Transactions on Electron Devices · 1979 · 165 citations

Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose

F. F. Morehead, B. L. Crowder, R. S. Title · Journal of Applied Physics · 1972 · 128 citations

Materials Science, Ion Implantation, Antimony Ions +13