L. Dmowski

Investigation of the<i>DX</i>center in heavily doped<i>n</i>-GaAs

D. K. Maude, J.C. Portal, L. Dmowski et al. · Physical Review Letters · 1987 · 148 citations

Semiconductors, Ii-vi Semiconductor, Electrical Engineering +12

Structural and magnetic phase transitions in CoxNi1−xMnGe system under pressure

S. Nizioł, Andrzej Zięba, R. Zach et al. · Journal of Magnetism and Magnetic Materials · 1983 · 75 citations

Materials Science, Magnetism, Ferromagnetism +10

First observation of the quantum Hall effect in a Ga0.47In0.53As-InP heterostructure with three electric subbands

Manijeh Razeghi, J.P. Duchemin, J.C. Portal et al. · Applied Physics Letters · 1986 · 59 citations

Magnetic Properties, Engineering, Magnetic Resonance +16

High pressure and<i>DX</i>centers in heavily doped bulk GaAs

T. Suski, R. Piotrzkowski, P. Wiśniewski et al. · Physical review. B, Condensed matter · 1989 · 43 citations

Semiconductors, Semiconductor Technology, Pressure Dependence +14

First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition

Manijeh Razeghi, P. Maurel, F. Omnès et al. · Applied Physics Letters · 1986 · 40 citations

Semiconductors, Engineering, Physics +14