F. Omnès - Concepedia

Author

F. Omnès

Centre National de la Recherche Scientifique

Also Known As

F Omnes, F Omnès, F. Omnes, F. Omnès, F. Omnès, F. Omnés, Franck Omnes, Franck Omnès, Omnes, F., Omnès, F.

175

Publications

Citations

H-Index

110

Concepts

All Affiliations

Centre National de la Recherche Scientifique Université Joseph Fourier Commissariat à l'Énergie Atomique et aux Énergies Alternatives Institut Néel CEA Grenoble

About

F. Omnès is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	34	74	3.1K
2	Applied Physics	34	73	3K
3	Natural Sciences	8	8	336
4	Medicine	1	1	25
5	Biomedical Engineering	1	1	25

F. Omnès

Publications

3.6K

Citations

H-Index

Page 1

	Year	Citations
Metal-insulator transition and superconductivity in boron-doped diamond T. Klein, P. Achatz, J. Kačmarčík, Physical Review B	2007	188
Hall hole mobility in boron-doped homoepitaxial diamond Julien Pernot, P. N. Volpe, F. Omnès, Physical Review B Materials ScienceDiamond-like CarbonBoron NitrideNeutral Boron AtomsEngineering	2010	165
Extreme dielectric strength in boron doped homoepitaxial diamond Pierre‐Nicolas Volpe, Pierre Muret, Julien Pernot, Applied Physics Letters Materials ScienceExtreme Dielectric StrengthElectrical EngineeringDiamond-like CarbonCorresponding Electric Field	2010	150
Conduction- and valence-band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition Dipankar Biswas, Nacer Debbar, P. Bhattacharya, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringCapacitance Transient	1990	143
High hole mobility in boron doped diamond for power device applications Pierre‐Nicolas Volpe, Julien Pernot, Pierre Muret, Applied Physics Letters SemiconductorsHigh Hole MobilityElectrical EngineeringSemiconductor TechnologyEngineering	2009	142
First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate Manijeh Razeghi, M. Defour, R. Blondeau, Applied Physics Letters Materials SciencePhotonicsGa0.25in0.75as0.5p0.5-inp LaserRoom TemperatureEngineering	1988	117
Comparison of the XPS spectra from homoepitaxial {111}, {100} and polycrystalline boron-doped diamond films S. Ghodbane, D. Ballutaud, F. Omnès, Diamond and Related Materials Materials ScienceDiamond-like CarbonBoron NitrideEngineeringApplied Physics	2010	97
Impurity dimers in superconducting B-doped diamond: Experiment and first-principles calculations Emmanuel Bourgeois, E. Bustarret, P. Achatz, Physical Review B Superconducting MaterialEngineeringCubic Boron NitrideRaman MeasurementsHexagonal Boron Nitride	2006	93
Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications F. Omnès, Norman Marenco, B. Beaumont, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringOptical MaterialsGan Nucleation Layer	1999	93
XPS study of ruthenium tris-bipyridine electrografted from diazonium salt derivative on microcrystalline boron doped diamond Charles Agnès, Jean‐Charles Arnault, F. Omnès, Physical Chemistry Chemical Physics	2009	92

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